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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V
ID25 200 A 180 A 200 A trr 250 ns
RDS(on) 6 mW 7 mW 6 mW
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC= 25C; Chip capability Terminal current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, T J 150C, RG = 2 W TC = 25C 200N06/200N07 180N07 N07 N06 N07 N06
Maximum Ratings 70 60 70 60 20 30 200 180 100 600 100 30 2 5 520 -55 ... +150 150 -55 ... +150 V V V V V V A A A A A mJ J V/ns W C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features * International standard packages * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier
50/60 Hz, RMS IISOL 1 mA Mounting torque Terminal connection torque
t = 1 min t=1s
2500 3000
1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 30 g
Applications * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. N06 N07 60 70 2 V V V nA mA mA
VDSS VGS (th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 125C
4 200 400 2
TJ = 25C
Advantages * Easy to mount * Space savings * High power density
97533A (9/99)
VGS = 10 V, ID = 0.5 * ID25 200N06/200N07 Pulse test, t 300 ms, duty cycle d 2 % 180N07
6 mW 7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXFN 200N06
Symbol Test Conditions
IXFN 180N07 IXFN 200N07
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 80 9000 S pF pF pF ns ns ns ns nC nC nC 0.24 0.05 K/W K/W
miniBLOC, SOT-227 B
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
4000 2400 30
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External),
60 100 60 480
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25
60 240
miniBLOC, SOT-227 B miniBLOC, SOT-227 B
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200N06/200N07 180N07 200 180 600 1.7 150 250 A A A V ns mC A
T U
Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25 A -di/dt = 100 A/ms, VR = 50 V
0.7 9
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFN 200N06
IXFN 180N07 IXFN 200N07
175 150
TJ = 25OC
600
VGS=10V 9V 8V 7V 6V TJ=25OC
500
VGS=10V 9V 8V
ID - Amperes
125 100 75 50 25 0 0.0
ID - Amperes
400
7V
5V
300 200 100 0
6V
5V
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
Figure 1. Output Characteristics at 25OC
VDS - Volts
Figure 2. Extended Output Characteristics
600
VDS > 4RDS(ON)
80
Transconductance - Siemens
500
TJ=150OC
70 60 50 40 30 20 10 0 0
VGS=10V
TJ = 25oC
ID - Amperes
400
TJ=25OC
TJ = 100oC
300 200 100 0 2 4 6
TJ=100OC
TJ = 150oC
8
10
12
100
200
300
400
500
600
VGS - Volts
IC - Amperes
Figure 3. Admittance Curves
Figure 4.
Transconductance vs. Drain Current
1.4
TJ = 25oC
2.25 2.00
ID = 75A VGS = 10V
RDS(ON) - Normalized
1.3
RDS(ON) - Normalized
500 600
1.2 1.1 1.0 0.9 0.8 0 100 200 300 400
VGS = 10V VGS = 15V
1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TJ - Degrees C
Figure 5. RDS(on) normalized to 0.5 ID25 value
Figure 6. Normalized RDS(on) vs. Junction Temperature
(c) 2000 IXYS All rights reserved
3-4
IXFN 200N06
IXFN 180N07 IXFN 200N07
16 14 12
VDS = 40V ID = 38A IG = 1mA
250
IXFN200
200
ID - Amperes
VGS - Volts
10 8 6 4 2 0 0 100 200 300 400 500 600 700
150 100 50 0 -50
IXFN180
(Terminal current limit)
-25
0
25
50
75
100 125 150
O
Gate Charge - nCoulombs
Case Temperature - C
Figure 7. Gate Charge
Figure 8. Drain Current vs. Case Temperature
400
F = 1MHz TJ =150OC
12000 10000
p
8000 6000
ID - Amperes
Ciss
300
200
TJ =25OC TJ =150 C
O
Coss
p
4000 2000 0 0 10 20 30 40
Crss
100
TJ =100OC
0 0.0
0.5
1.0
1.5
2.0
VDS - Volts
VSD - Volts
Figure 9. Capacitance Curves
100 Thermal Response - K/W
Figure 10. Source-Drain Voltage vs. Source Current
10-1
10-2 10-3
10-2 Time - Seconds
10-1
100
Figure 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-4

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